- patented trench schottky technology - excellent high temperature stability - low forward voltage - low power loss/ high efficiency - high forward surge capability packing code with suffix "g" means green compound (halogen-free) terminal: matte tin plated leads, solderable per jesd22-b102 meet jesd 201 class 2 whisker test v rrm v dv/dt v/ s min. typ. max. min. typ. max. i f = 2.5a - 0.44 - - 0.46 - i f = 5a - 0.48 0.58 - 0.54 0.62 i f = 2.5a - 0.33 - - 0.38 - i f = 5a - 0.40 0.50 - 0.48 0.56 t j = 25c - - 500 - - 500 a t j = 125c -515-625ma r jc o c/w t j o c t stg o c document number: ds_d1411056 version: e14 storage temperature range - 55 to +150 note 1: pulse test with pulse width=300 s, 1% duty cycle v f typical thermal resistance per diode instantaneous forward voltage per diode ( note1 ) t j = 25c 5.5 operating junction temperature range - 55 to +150 v t j = 125c voltage rate of change (rated v r ) 10000 instantaneous reverse current per diode at rated reverse voltage i r a per diode 5 peak forward surge current, 8.3 ms single half sine-wave superimposed on rated load per diode i fsm 100 a maximum repetitive peak reverse voltage 45 60 maximum average forward rectified current per device i f(av) 10 mounting torque: 0.56 nm max. weight: 1.7 g (approximately) maximum ratings and electrical characteristics (t a =25 o c unless otherwise noted) parameter symbol ts f10h45c tsf10h60c unit typical applications trench schottky barrier rectifier are designed for high frequency miniature switched mode power supplies such as adapters, lighting and on-board dc/dc converters. mechanical data case: ito-220ab molding compound meets ul 94 v-0 flammability rating polarity: as marked TSF10H45C thru tsf10h60c taiwan semiconductor trench schottky rectifier features - compliant to rohs directive 2011/65/eu and in accordance to weee 2002/96/ec - halogen-free according to iec 61249-2-21 definition ito-220ab
part no. document number: ds_d1411056 version: e14 tsh10hxxc (note 1) c0 packing code green compound description c0 50 / tube TSF10H45C thru tsf10h60c taiwan semiconductor ordering information packing packing code suffix package note 1: "xx" defines voltage from 45v (TSF10H45C) to 60v (tsf10h60c) ratings and characteristics curves (t a =25 o c unless otherwise noted) example preferred part no. TSF10H45C c0g TSF10H45C g g ito-220ab part no. packing code packing code suffix 0 2.5 5 7.5 10 12.5 0 25 50 75 100 125 150 average forward current (a) case temperature ( o c) fig.1- forward current derating curve with heatsink 3in x 5in x 0.25in al-plate 0.1 1 10 100 0 0.2 0.4 0.6 0.8 1 instantaneous forward current (a) forward voltage (v) fig. 2- typical forward characteristics t j =25 o c t j =100 o c t j =125 o c t j =150 o c TSF10H45C 0.1 1 10 100 0 0.2 0.4 0.6 0.8 1 1.2 instantaneous forward current (a) forward voltage (v) fig. 3- typical forward characteristics t j =25 o c t j =100 o c t j =125 o c t j =150 o c tsf10h60c 0.001 0.01 0.1 1 10 100 10 20 30 40 50 60 70 80 90 100 instantaneous reverse current (ma) percent of rated peak reverse voltage (%) fig. 4- typical reverse characteristics t j =25 o c t j =100 o c t j =125 o c t j =150 o c TSF10H45C
document number: ds_d1411056 version: e14 TSF10H45C thru tsf10h60c taiwan semiconductor 0.001 0.01 0.1 1 10 100 10 20 30 40 50 60 70 80 90 100 instantaneous reverse current (ma) percent of rated peak reverse voltage (%) fig. 5- typical reverse characteristics t j =25 o c t j =100 o c t j =125 o c t j =150 o c tsf10h60c 10 100 1000 10000 0.1 1 10 100 junction capacitance (pf) a reverse voltage (v) fig. 6- typical junction capacitance f=1.0mhz vsig=50mvp-p tsf10h60c TSF10H45C
dim. min max min max a 4.30 4.70 0.17 0.19 b 2.50 3.16 0.10 0.12 c 2.30 2.96 0.09 0.12 d 0.46 0.76 0.02 0.03 e 6.30 6.90 0.25 0.27 f 9.60 10.30 0.38 0.41 g 3.00 3.40 0.12 0.13 h 0.95 1.45 0.04 0.06 i 0.50 0.90 0.02 0.04 j 2.40 3.20 0.09 0.13 k 14.80 15.50 0.58 0.61 l - 4.10 - 0.16 m 12.60 13.80 0.50 0.54 n - 1.80 - 0.07 o 2.41 2.67 0.09 0.11 p/n = specific device code g = green compound yww = date code f = factory code document number: ds_d1411056 version: e14 marking diagram TSF10H45C thru tsf10h60c taiwan semiconductor package outline dimensions ito-220ab unit (mm) unit (inch)
creat by art assumes no responsibility or liability for any errors or inaccuracies. information contained herein is intended to provide a product description only. no license, express or implied,to any intellectual property rights is granted by this document. except as provided in tsc's terms and conditions of sale for such products, tsc assumes no liability whatsoever, and disclaims any express or implied warranty, relating to sale and/or use of tsc products including liability or warranties relating to fitness for a particular purpose, merchantability, or infringement of any patent, copyright, or other intellectual property right. the products shown herein are not designed for use in medical, life-saving, or life-sustaining applications. customers using or seling these products for use in such applications do so at their own risk and agree to fully indemnify tsc for any damages resulting from such improper use or sale. document number: ds_d1411056 version: e14 TSF10H45C thru tsf10h60c taiwan semiconductor notice specifications of the products displayed herein are subject to change without notice. tsc or anyone on its behalf,
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